Title :
Growth and properties of pulsed laser deposited superconducting La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ thin films
Author :
Weidong Si ; Xi, X.X.
Author_Institution :
Dept. of Phys., Pennsylvania State Univ., University Park, PA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
High quality thin films of high temperature superconducting La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ have been grown using pulsed laser deposition on LaSrAlO/sub 4/ buffer layers on [100] SrTiO/sub 3/ substrates. An ozone/oxygen mixture was used during the cooling of the films from the deposition temperature. The zero-resistance superconducting transition temperature T/sub c/ was 39 K and the critical current density J/sub c/ was over 10/sup 6/ A/cm/sup 2/ at 4.2 K for 800 /spl Aring/ thin films. The resistivity was found to depend linearly on temperature with a resistivity ratio /spl rho/(300 K)//spl rho/p(50 K) of 4.5 and an intercept at T=0 of /spl sim/30 /spl mu//spl Omega/cm.
Keywords :
critical current density (superconductivity); electrical resistivity; high-temperature superconductors; lanthanum compounds; pulsed laser deposition; strontium compounds; superconducting thin films; superconducting transition temperature; (100) SrTiO/sub 3/ substrate; 39 K; 4.2 K; 800 A; La/sub 1.85/Sr/sub 0.15/CuO/sub 4/; LaSrAlO/sub 4/; LaSrAlO/sub 4/ buffer layers; SrTiO/sub 3/; cooling; critical current density; deposition temperature; ozone/oxygen mixture; pulsed laser deposition; resistivity; resistivity ratio; temperature dependence; thin films; zero-resistance superconducting transition temperature; Conductivity; High temperature superconductors; Laser transitions; Optical pulses; Pulsed laser deposition; Sputtering; Strontium; Superconducting epitaxial layers; Superconducting thin films; Superconducting transition temperature;
Journal_Title :
Applied Superconductivity, IEEE Transactions on