Title :
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
Author :
Chen, C.H. ; Fang, Y.K. ; Hsieh, W.T. ; Ting, S.-F. ; Yu, M.C. ; Wang, M.F. ; Chen, C.L. ; Yao, L.G. ; Chen, S.C. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/25/2001 12:00:00 AM
Abstract :
The physical and electrical properties of ultra-thin remote plasma nitrided oxides (RPNO) in the 10 to 30 Å range were extensively investigated. Experimental results show that a significant physical thickness increase is observed in RPNO with base oxide less than 20 Å owing to the penetration of nitrogen radicals. Thinner base oxides result in worse equivalent oxide thickness (EOT) scalability, thus leading to ~14 Å manufacturability EOT limit for RPN gate dielectrics
Keywords :
MIS devices; dielectric thin films; free radicals; nitridation; oxidation; plasma materials processing; 10 to 30 A; EOT scalability; N; SiON; electrical properties; equivalent oxide thickness scalability; gate dielectrics; manufacturability EOT limit; nitrogen radicals; physical properties; radical-induced re-oxidation; ultra-thin remote plasma nitrided oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010923
