DocumentCode
1548799
Title
Characterization of systematic MOSFET current factor mismatch caused by metal CMP dummy structures
Author
Tuinhout, Hans P. ; Vertregt, Maarten
Author_Institution
Philips Res., Eindhoven, Netherlands
Volume
14
Issue
4
fYear
2001
fDate
11/1/2001 12:00:00 AM
Firstpage
302
Lastpage
310
Abstract
This paper presents a study on techniques for characterization of metal-oxide-semiconductor field-effect transistor (MOSFET) transconductance mismatch, using matched pairs with intentional 1% dimensional offsets. The relevance of this kind of work is demonstrated by the introduction of a new mismatch phenomenon that can be attributed to mechanical strain, associated with metal dummy structures that are required for backend chemical mechanical polishing (CMP) processing steps
Keywords
MOSFET; chemical mechanical polishing; semiconductor device testing; MOSFET; backend processing; chemical mechanical polishing; current factor mismatch; dimensional offset; matched pair; measurement algorithm; mechanical strain; metal dummy structure; systematic parametric mismatch; test structure; transconductance mismatch; CMOS technology; Capacitive sensors; Chemical processes; Current measurement; FETs; Fabrication; Fluctuations; MOSFET circuits; Transconductance; Voltage;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.964317
Filename
964317
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