DocumentCode :
1548836
Title :
Some practical concerns on isothermal electromigration tests
Author :
Huang, Jun-Cheng Andy ; Chien, Wei-Ting Kary ; Huang, Charles Hung-Jia
Author_Institution :
Reliability Eng., Semicond. Manuf. Int. Corp., Shanghai, China
Volume :
14
Issue :
4
fYear :
2001
fDate :
11/1/2001 12:00:00 AM
Firstpage :
387
Lastpage :
394
Abstract :
The isothermal electromigration (EM) test at wafer level can greatly reduce the test time from months to minutes. This plausible feature makes inline reliability monitoring a promising approach to enhance product reliability. Although most wafer-level reliability (WLR) tests are applied for process monitors and comparisons, their applicability for qualification will be justified. The correlation between package-level reliability (PLR) and the isothermal EM is necessary and is discussed in this paper. Besides failure analysis, a 95% confidence interval of activation energy is constructed. Since the sizes of voids formed at isothermal EM are much smaller than those at PLR EM tests, the failure criterion should be changed (i.e., using a smaller OR). Issues for better test structure designs are described and verified. Generally, the straight-line test structure with four pads is recommended for the isothermal EM tests because of the uniform temperature profile. An extensive example is provided to illustrate the procedures on isothermal EM tests for WLR control. In the example, we propose using t50 for routine Cpk review and the slope of the fitting line to monitor the degradation. The spec limits can be obtained based on customers´ or internal reliability goals
Keywords :
current density; electromigration; failure analysis; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; life testing; temperature distribution; voids (solid); activation energy; failure analysis; inline reliability monitor; internal reliability goals; isothermal electromigration test; package-level reliability; product reliability; qualification; straight-line test structure; test structure designs; test time; uniform temperature profile; voids; wafer level; Condition monitoring; Degradation; Electromigration; Failure analysis; Isothermal processes; Packaging; Qualifications; Temperature; Testing; Wafer scale integration;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.964326
Filename :
964326
Link To Document :
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