Title :
High-voltage sustaining structure with embedded oppositely doped regions
Author :
Chen, X.B. ; Towers, M.S. ; Mawby, P ; Board, K.
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
4/1/1999 12:00:00 AM
Abstract :
A voltage-sustaining structure with embedded oppositely doped islands is proposed. Due to the compensation of the field induced by these regions, the doping density of the voltage-sustaining layer can be made larger than that in a conventional voltage-sustaining layer with the same breakdown voltage, and therefore the on-voltage can be reduced. The theory of design for such structures is found to be in good agreement with the results of full 2-dimensional simulation. The on-state performance, the transient behaviour and the potential applications of this structure in power devices are also discussed
Keywords :
electric fields; power semiconductor devices; semiconductor device breakdown; transient response; HV sustaining structure; breakdown voltage; doping density; embedded oppositely doped regions; high-voltage sustaining structure; on-state performance; on-voltage reduction; power devices; transient behaviour;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19990234
