GaAs IC´s fabricated with the high-performance, high-yield multifunction self-aligned gate process for radar and EW applications

Author

Bahl, Inder J. ; Willems, David A. ; Naber, John F. ; Singh, Hausila P. ; Griffin, Edward L. ; Pollman, Michael D. ; Geissberger, Arthur E. ; Sadler, Robert A.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

Volume

38

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1232

Lastpage

1241

Abstract

Design and test results are presented for several multiuse GaAs ICs for radar and electronic warfare (EW) applications. The chips described are a redundant switch, a broadband distributed amplifier, a broadband variable-gain amplifier, a 2.5-GHz sample and hold, a 1-GHz analog-to-digital converter, and an L-band buffered prescalar. These ICs, fabricated with the ITT 0.4-μm-gate MESFET multifunction self-aligned gate (MSAG) process, demonstrate excellent performance

Keywords

III-V semiconductors; MMIC; analogue-digital conversion; electronic warfare; field effect integrated circuits; gallium arsenide; microwave amplifiers; radar equipment; sample and hold circuits; scaling circuits; switching circuits; wideband amplifiers; 0.4 micron; 1 GHz; 2.5 GHz; GaAs; GaAs ICs; L-band buffered prescalar; MESFET; analog-to-digital converter; broadband distributed amplifier; broadband variable-gain amplifier; electronic warfare; high-yield multifunction self-aligned gate process; radar; redundant switch; sample and hold; Analog-digital conversion; Application specific integrated circuits; Costs; Distributed amplifiers; FETs; Gallium arsenide; Implants; Integrated circuit technology; Radar applications; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.58648

Filename

58648