DocumentCode
1549393
Title
DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
Author
Hofmann, L. ; Klehr, A. ; Knauer, A. ; Smirnitski, V.B. ; Stolz, W.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume
35
Issue
11
fYear
1999
fDate
5/27/1999 12:00:00 AM
Firstpage
902
Lastpage
903
Abstract
The realisation of DBR diode lasers with a first-order grating fabricated by holographic lithography in an InGaP waveguide layer is described for the first time. The lasers show excellent characteristics with a threshold current density of 100 A/cm2 and a CW output power of 75 mW at 25°C.
Keywords
indium compounds; 1060 nm; 25 C; 75 mW; CW output power; DBR diode lasers; DBR lasers; InGaP; InGaP waveguide layer; first-order grating; first-order grating fabrication; holographic lithography; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990631
Filename
785382
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