Title :
DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer
Author :
Hofmann, L. ; Klehr, A. ; Knauer, A. ; Smirnitski, V.B. ; Stolz, W.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
5/27/1999 12:00:00 AM
Abstract :
The realisation of DBR diode lasers with a first-order grating fabricated by holographic lithography in an InGaP waveguide layer is described for the first time. The lasers show excellent characteristics with a threshold current density of 100 A/cm2 and a CW output power of 75 mW at 25°C.
Keywords :
indium compounds; 1060 nm; 25 C; 75 mW; CW output power; DBR diode lasers; DBR lasers; InGaP; InGaP waveguide layer; first-order grating; first-order grating fabrication; holographic lithography; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990631
