• DocumentCode
    1549411
  • Title

    Intermodulation distortion reduction with drain bias in parallel MESFET switch

  • Author

    García, J.A. ; De la Fuente, M.L. ; Pedro, J.C. ; Mediavilla, A. ; Tazón, A. ; García, J.L.

  • Author_Institution
    Dept. Ingenieria de Commun., Cantabria Univ., Santander, Spain
  • Volume
    35
  • Issue
    11
  • fYear
    1999
  • fDate
    5/27/1999 12:00:00 AM
  • Firstpage
    907
  • Lastpage
    909
  • Abstract
    A relationship is described between the intermodulation distortion (IMD) performance of a parallel MESFET switch to the device´s experimentally extracted higher order derivatives. As the third-order Ids(Vgs, Vds) Taylor-series coefficients support a non-optimum linearity in cold FET operation (VDS=0 V), a small drain-to-source voltage ´sweet spot´ has been found for IMD reduction, giving a useful bias point for highly linear switching applications without degrading attenuation.
  • Keywords
    intermodulation distortion; GaAs; IMD reduction; Taylor-series coefficients; cold FET operation; drain bias; higher order derivatives; highly linear switching applications; intermodulation distortion; nonoptimum linearity; parallel MESFET switch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990635
  • Filename
    785386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1549411