DocumentCode :
1549411
Title :
Intermodulation distortion reduction with drain bias in parallel MESFET switch
Author :
García, J.A. ; De la Fuente, M.L. ; Pedro, J.C. ; Mediavilla, A. ; Tazón, A. ; García, J.L.
Author_Institution :
Dept. Ingenieria de Commun., Cantabria Univ., Santander, Spain
Volume :
35
Issue :
11
fYear :
1999
fDate :
5/27/1999 12:00:00 AM
Firstpage :
907
Lastpage :
909
Abstract :
A relationship is described between the intermodulation distortion (IMD) performance of a parallel MESFET switch to the device´s experimentally extracted higher order derivatives. As the third-order Ids(Vgs, Vds) Taylor-series coefficients support a non-optimum linearity in cold FET operation (VDS=0 V), a small drain-to-source voltage ´sweet spot´ has been found for IMD reduction, giving a useful bias point for highly linear switching applications without degrading attenuation.
Keywords :
intermodulation distortion; GaAs; IMD reduction; Taylor-series coefficients; cold FET operation; drain bias; higher order derivatives; highly linear switching applications; intermodulation distortion; nonoptimum linearity; parallel MESFET switch;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990635
Filename :
785386
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1549411
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