Title :
4H-SiC visible blind UV avalanche photodiode
Author :
Yan, F. ; Luo, Y. ; Zhao, J.H. ; Olsen, G.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
5/27/1999 12:00:00 AM
Abstract :
The first 4H-SiC avalanche photodiode for visible-blind UV applications has been designed and fabricated successfully. The device structure is described and the photo-responsivity characteristics presented. The observation of a positive temperature coefficient for an avalanche breakdown voltage up to 257°C is also discussed.
Keywords :
silicon compounds; 257 C; 4H-SiC visible blind UV avalanche photodiode; SiC; avalanche breakdown vol; device structure; optical design; optical fabrication; photo-responsivity characteristics; positive temperature coefficient; visible-blind UV applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990641
