Title :
AlGaN/GaN dual-gate modulation-doped field-effect transistors
Author :
Chen, C.H. ; Krishnamurthy, K. ; Keller, S. ; Parish, G. ; Rodwell, M. ; Mishra, U.K. ; Wu, Y.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/27/1999 12:00:00 AM
Abstract :
The first results concerning dual-gate AlGaN/GaN MODFETs are presented. The devices have 0.65 μm gate lengths and were grown by metal organic chemical vapour deposition (MOCVD) on a sapphire substrate. The continuous wave (CW) output power is in excess of 2.5 W/mm at 4 GHz. The corresponding large-signal gain is 11.5 dB and the power added efficiency is 30.6%. Dual-gate devices with different gate lengths can provide simultaneous high breakdown voltage and high current-gain cutoff frequency for broadband power amplifiers.
Keywords :
high electron mobility transistors; 0.65 micron; 11.5 dB; 30.6 percent; 4 GHz; AlGaN-GaN; CW output power; breakdown voltage; current-gain cutoff frequency; dual-gate modulation-doped field-effect transistors; gate lengths; large-signal gain; metal organic chemical vapour deposition; microwave FETs; power added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990627
