Title :
Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
Author :
Melique, X. ; Maestrini, A. ; Mounaix, P. ; Favreau, M. ; Vanbesien, O. ; Goutoule, J.M. ; Beaudin, G. ; Nahri, T. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Lille I Univ., Villeneuve d´´Ascq, France
fDate :
5/27/1999 12:00:00 AM
Abstract :
Record performances in terms of output power (9.5 dBm) and maximum efficiency (12.3%) have been demonstrated for a 250 GHz heterostructure barrier varactor tripler. Such good results are explained by the use of highly nonlinear InGaAs/InAlAs/AlAs planar integrated diodes, which are seen to have numerous advantages over their GaAs-based counterparts.
Keywords :
varactors; 12.3 percent; 250 GHz; III-V semiconductors; InGaAs-InAlAs-AlAs; InGaAs/InAlAs/AlAs; heterostructure barrier varactor tripler; maximum efficiency; nonlinear planar integrated diodes; output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990626
