A realization of a GaAs FET microwave active filter

Author

Sussman-Fort, Stephen E.

Author_Institution

Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA

Volume

38

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

1524

Lastpage

1526

Abstract

A methodology for microwave active filter design has been presented by this author (see ibid., vol.37, no.9, p.1418-24, 1989). The present work serves to verify aspects of this design approach. A practical implementation of a network discussed in that work is given. First, an ideal preliminary design for a second-order bandpass filter is obtained. Next, the nonideal effects of the active devices and the lossy reactive elements are introduced, and then optimization is used to obtain the final design. Finally, the filter is constructed and tested. The measured response is found to agree quite closely with the design specifications. The filter section is constructed in hybrid form with lumped components, and uses two NEC 900100 GaAs FETs. The prototype accurately realizes a second-degree bandpass response with a center frequency of 6 GHz and a pole q of 2.5

Keywords

III-V semiconductors; active filters; band-pass filters; gallium arsenide; hybrid integrated circuits; microwave filters; microwave integrated circuits; 6 GHz; FET microwave active filter; GaAs; MIC; NEC 900100 devices; SHF; active devices; filter design; hybrid form; lossy reactive elements; lumped components; nonideal effects; optimization; second-degree bandpass response; second-order bandpass filter; Active filters; Band pass filters; Design optimization; Frequency; Gallium arsenide; Microwave FETs; Microwave theory and techniques; National electric code; Prototypes; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.58697

Filename

58697