Study of breakdown effects in silicon multiguard structures

Author

Da Rold, M. ; Bacchetta, N. ; Bisello, D. ; Paccagnella, A. ; Betta, G. F Dalla ; Verzellesi, G. ; Militaru, O. ; Wheadon, R. ; Fuochi, P.G. ; Bozzi, C. ; Dell´Orso, R. ; Messineo, A. ; Tonelli, G. ; Verdini, P.G.

Author_Institution

Dipt. di Fisica, Padova Univ., Italy

Volume

46

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1215

Lastpage

1223

Abstract

The purpose of this work is to study layout solutions aimed at increasing the breakdown voltage in silicon micro-strip detectors. Several structures with multiple floating guards in different configurations have been designed and produced on high-resistivity silicon wafers. The main electrical characteristics of these devices have been measured before and after irradiation. Both radiation-induced surface and bulk damage effects were considered as well. The highest breakdown voltage was found on devices featuring p⁺ guards without field plates. A simulation study has been carried out on simplified structures to evaluate the distribution of the breakdown field as a function of the guard layout. The aim was design optimization

Keywords

avalanche breakdown; radiation effects; silicon radiation detectors; Si; Si micro-strip detectors; Si multiguard structures; breakdown voltage; bulk damage; floating guards; irradiation; surface damage; Avalanche breakdown; Design optimization; Electric breakdown; Electric variables; Electric variables measurement; Large Hadron Collider; Radiation detectors; Silicon radiation detectors; Strips; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.785736

Filename

785736