DocumentCode :
1549882
Title :
Design of Highly Efficient Three-Stage Inverted Doherty Power Amplifier
Author :
Lee, Mun-Woo ; Kam, Sang-Ho ; Lee, Yong-Sub ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electr. Eng., POSTECH, Pohang, South Korea
Volume :
21
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
383
Lastpage :
385
Abstract :
This letter reports the highly efficient three-stage inverted Doherty power amplifier (IDPA) using 30 W and 50 W Si LDMOSFETs. The characteristic impedances of the output combiner are derived to achieve high efficiency at a large back-off power (BOP). The output matching networks and offset lines of the carrier and peaking cells are used to modulate the load impedance. The transmission line in the input path of the carrier cell is inserted to adjust the delay among the carrier and peaking cells. The drain efficiency (DE) of 40.3% with a gain of 9 dB is achieved at output power of 42 dBm (8.5 dB BOP) and the DE above 40% is maintained in wide output range for a 2.14 GHz continuous wave signal. For a one-carrier WCDMA signal at an output power of 40 dBm (10.5 dB BOP), the DE of 35% with the gain of 9.2 dB is achieved.
Keywords :
MOSFET; power amplifiers; LDMOSFET; back-off power; carrier cell; characteristic impedance; drain efficiency; frequency 2.14 GHz; gain 9 dB; gain 9.2 dB; load impedance; one-carrier WCDMA signal; output matching network; power 30 W; power 50 W; three-stage inverted Doherty power amplifier; transmission line; Gain; Multiaccess communication; Power amplifiers; Power generation; Spread spectrum communication; Transmission line measurements; Wireless communication; Doherty power amplifier (PA); LDMOSFET; WCDMA; efficiency; inverted Doherty PA;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2153840
Filename :
5871306
Link To Document :
بازگشت