Title :
Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method
Author :
Obolensky, S.V. ; Murel, A.V. ; Vostokov, N.V. ; Shashkin, V.I.
Author_Institution :
N.I. Lobachevsky State Univ. of Nizhny Novgorod, Nizhny Novgorod, Russia
Abstract :
The electron-transport processes in a low-barrier Mott diode are studied by the methods of numerical simulation. The effects related to the quasi-ballistic motion of electrons are examined. The I-V characteristics of the diode are obtained. We have performed a comparative analysis of the results of the simulation, which was carried out using different approaches: the Monte Carlo method and the local-field model. The calculated I-V characteristics are compared with the experimental dependence. The applicability limits of the approaches we used are analyzed.
Keywords :
Monte Carlo methods; semiconductor diodes; I-V characteristic; Monte Carlo method; electron transport; local-field model; low-barrier Mott diode; quasiballistic motion; Doping; Electric potential; Mathematical model; Monte Carlo methods; Semiconductor diodes; Substrates; Tunneling; Low-barrier Mott diode; Monte Carlo method; semiconductor device modeling; simulation of electron transport;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2156410
