Title :
Gain calculations for unipolar semiconductor lasers
Author :
Cheung, C.Y.L. ; Rees, P. ; Shore, K.A.
Author_Institution :
Sch. of Electron. Eng. & Comput. Syst., Univ. of Wales, Bangor, UK
fDate :
8/1/1999 12:00:00 AM
Abstract :
The optical gain spectra of a single triple quantum well (TQW) mid-infrared (MIR) laser element suitable for incorporation in a quantum cascade configuration are investigated. The kinetics of the carrier transport in the TQW structure are provided using a four-level rate equation model. The low gain per element at MIR frequencies illustrates the need for several such elements. Preliminary gain calculations for a near-infrared (NIR) structure are also performed
Keywords :
carrier mobility; infrared sources; laser theory; quantum well lasers; semiconductor device models; MIR frequencies; TQW structure; carrier transport kinetics; four-level rate equation model; gain calculations; low gain; optical gain spectra; quantum cascade configuration; single triple quantum well mid-IR laser element; unipolar semiconductor laser gain calculations;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990452
