Title :
Analysis of waveguide properties of organic semiconductor lasers
Author :
Barlow, G.F. ; Shore, K.A.
Author_Institution :
Sch. of Electron. Eng. & Comput. Syst., Univ. of Wales, Bangor, UK
fDate :
8/1/1999 12:00:00 AM
Abstract :
The waveguiding properties of organic semiconductor lasers operating at 630 nm have been analysed. Calculations for gain-guided lasers show that single lateral mode operation can be supported in structures having active region widths of under 6 μm, albeit with confinement highly dependent on active layer thickness. Ridge-guided structures are investigated as a means of providing single-mode operation with stable lateral confinement at high-gain values. It is shown that ridge heights of about 0.03 μm are sufficient to provide lateral confinement of about 0.5
Keywords :
dye lasers; laser modes; laser theory; laser transitions; optical pumping; waveguide lasers; 0.03 mum; 630 nm; active layer thickness; active region widths; gain-guided lasers; high-gain values; lateral confinement; organic semiconductor lasers; ridge-guided structures; single lateral mode operation; single-mode operation; stable lateral confinement; waveguide laser properties; waveguiding properties;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990079
