Title :
Operating characteristics of GaAs-lnGaAs self-biased piezoelectric S-SEEDs
Author :
Moran, M. ; Rees, G.J. ; Woodhead, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
8/1/1999 12:00:00 AM
Abstract :
A theoretical analysis is presented of the performance of GaAs-In xGaAs self-biased piezoelectric symmetric self-electro-optic-effect devices (S-SEED). Although the operation of these devices has been demonstrated, the limitations on their performance have not been investigated. Despite the benefits associated with this type of S-SEED, the model presented suggests that their insertion loss cannot be less than ~70%. Further, because of the high quality factor required for the optical cavity, it is believed that the reproducibility of the contrast ratio will be intolerant to differences between the nominal and actual absorption coefficients. The model therefore suggests that these structures are not promising candidates for the logical elements required in optical processing
Keywords :
III-V semiconductors; Q-factor; SEEDs; absorption coefficients; gallium arsenide; indium compounds; optical logic; optical losses; optical resonators; semiconductor device models; GaAs-InxGaAs self-biased piezoelectric S-SEED; GaAs-InxGaAs self-biased piezoelectric symmetric self-electro-optic-effect devices; GaAs-lnGaAs self-biased piezoelectric S-SEEDs; actual absorption coefficients; contrast ratio; high quality factor; insertion loss; nominal absorption coefficients; operating characteristics; optical cavity; optical logic elements; optical processing; reproducibility; theoretical analysis;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19990455