Title :
Asymmetric flash volume management
Author :
Sung, Minyoung ; Kim, Kanghee
Author_Institution :
Dept. of Comput. Software Eng., Sangmyung Univ., Choenan, South Korea
fDate :
5/1/2012 12:00:00 AM
Abstract :
Logical volume management over an SLC (Single-Level Cell) / MLC (Multi-Level Cell) combined flash storage can provide improved performance and reliability. This paper proposes an asymmetric flash volume management (AFVM) scheme, which exploits the asymmetry of SLC and MLC flash memory in their service time characteristics. By hot data identification and periodic data migration, AFVM tries to maximize the overall read/write performance of the logical volume. Through extensive simulations with measured data on a real smartphone, we evaluate the performance of AFVM in comparison with other placement policies. Our experiments derive the best trade-off between the performance and overheads for various values of tunable parameters such as migration unit size, migration traffic limit, and migration period. The results show that AFVM could give better solutions, significantly reducing the execution time of a trace-driven workload at the expense of a negligible decrease in flash lifetime.
Keywords :
flash memories; storage management; AFVM; asymmetric flash volume management; flash lifetime; flash memory; flash storage; hot data identification; logical volume management; multilevel cell; periodic data migration; placement policy; read/write performance; single level cell; smartphone; trace-driven workload; Flash memory; Monitoring; Performance evaluation; Semiconductor device measurement; Size measurement; Throughput; Volume measurement; Logical volume management; SLC/MLC flash memory; data migration; hot data identification;
Journal_Title :
Consumer Electronics, IEEE Transactions on
DOI :
10.1109/TCE.2012.6227447