DocumentCode
155004
Title
Anisotropic etching of profiled membrabes for pressure sensors based on silicon-on-insulator structure
Author
Evdokimov, S.P.
Volume
2
fYear
2014
fDate
25-26 Sept. 2014
Firstpage
43
Lastpage
46
Abstract
The importance of "silicone on insulator" (SOI) structure for pressure sensors is shown. The SOI creations ways including anisotropic etching are considered.
Keywords
elemental semiconductors; etching; membranes; pressure sensors; silicon; silicon-on-insulator; SOI structure; Si; anisotropic etching; pressure sensor; profiled membrane; silicon-on-insulator structure; Educational institutions; Electronic mail; Etching; Insulators; Sensors; Silicon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4799-3437-9
Type
conf
DOI
10.1109/APEDE.2014.6958212
Filename
6958212
Link To Document