Title :
Selective amplifier microwave-based non-inverting repeater AC current element basis of radiation resistant SiGe process technology
Author :
Prokopenko, Nikolay N. ; Serebryakov, Alexander I. ; Butyrlagin, N.V.
Author_Institution :
Don State Tech. Univ., Rostov-on-Don, Russia
Abstract :
Considered circuitry of selective amplifiers (SA) of the microwave range, the basis for constructing non-inverting repeaters alternating current. Proposed scheme of SA implemented in element basis of radiation-resistant SiGe process technology and don´t contain any of the PNP transistors. Given calculation expressions of basic parameters. Shown the results of computer simulation of the SA in the gigahertz frequency range.
Keywords :
Ge-Si alloys; microwave amplifiers; microwave transistors; repeaters; AC current element; PNP transistors; computer simulation; noninverting repeaters alternating current; radiation resistant process technology; selective amplifier microwave-based noninverting repeater; Electronic mail; Microwave amplifiers; Microwave circuits; Microwave transistors; Repeaters; Silicon germanium;
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4799-3437-9
DOI :
10.1109/APEDE.2014.6958225
