• DocumentCode
    1550226
  • Title

    Very high power 1.48 μm semiconductor lasers

  • Author

    Mathur, A. ; Fisher, M. ; Ziari, M. ; Hagberg, M. ; Kolev, E.

  • Author_Institution
    SDL Inc., San Jose, CA, USA
  • Volume
    35
  • Issue
    12
  • fYear
    1999
  • fDate
    6/10/1999 12:00:00 AM
  • Firstpage
    983
  • Lastpage
    985
  • Abstract
    1.48 μm semiconductor diode laser structures with very high CW output power levels have been developed. Over 3.2 W from broad area lasers, record power of 410 mW from narrow stripe single mode lasers and record 1.8 W diffraction limited power from flared lasers have been obtained
  • Keywords
    semiconductor lasers; 1.48 micron; 1.8 W; 3.2 W; 410 mW; CW output power; broad area laser; diffraction limited power; flared laser; high power semiconductor diode laser; narrow stripe single mode laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990665
  • Filename
    788058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1550226