Title :
Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content
Author :
Tsujimura, A. ; Hasegawa, Y. ; Ishibashi, A. ; Kamiyama, S. ; Kidoguchi, I. ; Miyanaga, R. ; Suzuki, M. ; Kume, M. ; Harafuji, K. ; Ban, Y.
Author_Institution :
Central Res. Lab., Matsushita Commun. Ind. Co. Ltd., Osaka, Japan
fDate :
6/10/1999 12:00:00 AM
Abstract :
Based on the indium content dependence of optical gain in a GaInN multiquantum well (MQW) structure, room-temperature continuous-wave operation of GaInN MQW laser diodes is demonstrated. Amplified spontaneous emission spectra for Ga1-xInyN (x=0.07 0.11) MQWs suggest that lower indium content leads to smaller bandgap inhomogeneity and an improvement in the laser performance. Ga0.93 In0.07N MQW laser diodes were operated with a threshold current density of 11 kAcm2
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; quantum well lasers; superradiance; CW lasing; Ga0.93In0.07N; Ga0.93In0.07N MQW laser diodes; Ga1-xInyN; GaInN multiquantum well laser diodes; MQW lasers; amplified spontaneous emission spectra; bandgap inhomogeneity; laser performance; low indium content; room-temperature continuous-wave operation; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990679
