DocumentCode :
1550291
Title :
A High-Speed Fully-Integrated POF Receiver With Large-Area Photo Detectors in 65 nm CMOS
Author :
Dong, Yunzhi ; Martin, Kenneth W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Volume :
47
Issue :
9
fYear :
2012
Firstpage :
2080
Lastpage :
2092
Abstract :
This paper describes the design of a multi-gigabit fiber-optic receiver with integrated large-area photo detectors for plastic optical fiber applications. An integrated 250 μm diameter non-SML NW/P-sub photo detector is adopted to allow efficient light coupling. The theory of applying a fully-differential pre-amplifier with a single-ended photo current is also examined and a super-Gm transimpedance amplifier has been proposed to drive a C PD of 14 pF to multi-gigahertz frequency. Both differential and common-mode operations of the proposed super-Gm transimpedance amplifier have been analyzed and a differential noise analysis is performed. A digitally-controlled linear equalizer is proposed to produce a slow-rising-slope frequency response to compensate for the photo detector up to 3 GHz. The proposed POF receiver consists of an illuminated signal photo detector, a shielded dummy photo detector, a super-Gm transimpedance amplifier, a variable-gain amplifier, a linear equalizer, a post amplifier, and an output driver. A test chip is fabricated in TSMC´s 65 nm low-power CMOS process, and it consumes 50 mW of DC power (excluding the output driver) from a single 1.2 V supply. A bit-error rate of less than 10-12 has been measured at a data rate of 3.125 Gbps with a 670 nm VCSEL-based electro-optical transmitter.
Keywords :
CMOS integrated circuits; differential amplifiers; electro-optical devices; integrated optoelectronics; low-power electronics; operational amplifiers; optical receivers; photodetectors; surface emitting lasers; DC power; TSMC low-power CMOS process; VCSEL-based electro-optical transmitter; bit rate 3.125 Gbit/s; bit-error rate; capacitance 14 pF; common-mode operation; differential noise analysis; differential operation; digitally-controlled linear equalizer; fully-differential pre-amplifier; high-speed fully-integrated POF receiver; illuminated signal photo detector; integrated large-area photo detectors; light coupling; multigigabit fiber-optic receiver; multigigahertz frequency; nonSML NW/P-sub photo detector; output driver; plastic optical fiber applications; post amplifier; power 50 mW; shielded dummy photo detector; single-ended photo current; size 250 mum; size 65 nm; slow-rising-slope frequency response; super-Gm transimpedance amplifier; test chip; variable-gain amplifier; voltage 1.2 V; wavelength 670 nm; Bandwidth; CMOS process; Detectors; Noise; Optical fibers; Optical receivers; CMOS; CTLE; EQ; OEIC; PD; POF; TIA; current buffer; equalizer; fiber-optic; monolithic; optical receiver; photo detector; plastic optical fiber; super-Gm TIA; transimpedance amplifier;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2200529
Filename :
6228505
Link To Document :
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