DocumentCode
1550335
Title
Smart-Cut(R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
Author
Aspar, B. ; Jalaguier, E. ; Mas, A. ; Locatelli, C. ; Rayssac, O. ; Moriceau, H. ; Pocas, S. ; Papon, A.M. ; Michaud, J.F. ; Bruel, M.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Volume
35
Issue
12
fYear
1999
fDate
6/10/1999 12:00:00 AM
Firstpage
1024
Lastpage
1025
Abstract
The ability to obtain thin films using the Smart-Cut(R) process combined with metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic layers
Keywords
semiconductor thin films; GaAs; InP; Si; Smart-Cut process; metallic bonding; semiconductor thin film; silicon substrate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990663
Filename
788085
Link To Document