Title :
Novel 1-V full-swing high-speed BiCMOS circuit using positive feedback base-boost technique
Author :
Yeo, K.S. ; Lee, H.-K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
8/1/1999 12:00:00 AM
Abstract :
A novel 1-V full-swing BiCMOS logic circuit, using a positive feedback base-boost technique for high-speed applications, is described. Simulation results show that the circuit outperforms the best existing non-complementary BiCMOS circuits in terms of speed, power consumption and chip area. Based on 0.35 μm BiCMOS technology, the proposed circuit offers 49% delay reduction with negligible increase in power dissipation over the CMOS circuit at a supply voltage of 1 V and a load capacitance of 1pF. The crossover capacitance of the proposed circuit is as low as 0.1 pF, and experimental results confirm its circuit operation
Keywords :
BiCMOS logic circuits; capacitance; circuit feedback; delays; high-speed integrated circuits; 0.35 micron; 1 V; 1 pF; BiCMOS logic circuit; chip area; crossover capacitance; delay reduction; full-swing high-speed BiCMOS circuit; load capacitance; positive feedback base-boost technique; power consumption; power dissipation; speed;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19990225