Title : 
Novel 1-V full-swing high-speed BiCMOS circuit using positive feedback base-boost technique
         
        
            Author : 
Yeo, K.S. ; Lee, H.-K.
         
        
            Author_Institution : 
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
         
        
        
        
        
            fDate : 
8/1/1999 12:00:00 AM
         
        
        
        
            Abstract : 
A novel 1-V full-swing BiCMOS logic circuit, using a positive feedback base-boost technique for high-speed applications, is described. Simulation results show that the circuit outperforms the best existing non-complementary BiCMOS circuits in terms of speed, power consumption and chip area. Based on 0.35 μm BiCMOS technology, the proposed circuit offers 49% delay reduction with negligible increase in power dissipation over the CMOS circuit at a supply voltage of 1 V and a load capacitance of 1pF. The crossover capacitance of the proposed circuit is as low as 0.1 pF, and experimental results confirm its circuit operation
         
        
            Keywords : 
BiCMOS logic circuits; capacitance; circuit feedback; delays; high-speed integrated circuits; 0.35 micron; 1 V; 1 pF; BiCMOS logic circuit; chip area; crossover capacitance; delay reduction; full-swing high-speed BiCMOS circuit; load capacitance; positive feedback base-boost technique; power consumption; power dissipation; speed;
         
        
        
            Journal_Title : 
Circuits, Devices and Systems, IEE Proceedings -
         
        
        
        
        
            DOI : 
10.1049/ip-cds:19990225