DocumentCode :
1550552
Title :
pnp Si resonant interband tunnel diode with symmetrical NDR
Author :
Jin, N. ; Berger, P.R. ; Rommel, S.L. ; Thompson, P.E. ; Hobart, K.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume :
37
Issue :
23
fYear :
2001
fDate :
11/8/2001 12:00:00 AM
Firstpage :
1412
Lastpage :
1414
Abstract :
A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The IN characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with J p of 2.0 kA/cm2
Keywords :
elemental semiconductors; negative resistance; resonant tunnelling diodes; silicon; I-V characteristics; Si; Si resonant interband tunnel diode; Si-based RITD; fabrication process; growth temperature control; latch; p-n-p configuration; symmetrical NDR regions; symmetrical negative differential resistance; tunnel diode logic circuits;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010961
Filename :
966556
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1550552
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