Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

Author

Boucart, J. ; Starck, C. ; Gaborit, F. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Remy, J.C. ; Bonnet-Gamard, J. ; Goldstein, L. ; Fortin, C. ; Carpentier, D. ; Salet, P. ; Brillouet, F. ; Jacquet, J.

Author_Institution

Groupement d´´Interet Econ., Alcatel Corp. Res. Center, Marcoussis, France

Volume

5

Issue

3

fYear

1999

Firstpage

520

Lastpage

529

Abstract

We present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamorphic GaAs-AlAs distributed Bragg reflector and an injection through a reverse-biased tunnel junction. Record output powers as high as 1 mW and a maximum operating temperature of 47°C have thus been achieved. Furthermore, in this paper, we present the optimization work on the different constituting parts of the VCSEL

Keywords

distributed Bragg reflector lasers; integrated optoelectronics; optimisation; semiconductor lasers; surface emitting lasers; tunnelling; 1 mW; 47 C; CW RT monolithic long-wavelength VCSEL; GaAs-AlAs; GaAs-AlAs distributed Bragg reflector; continuous wave; maximum operating temperature; metamorphic DBR injection; monolithic long wavelength vertical-cavity surface-emitting laser; optimizatio; record output powers; reverse-biased tunnel junction; room temperature; tunnel-junction injection; Costs; Dielectrics; Distributed Bragg reflectors; Indium phosphide; Mirrors; Optical surface waves; Surface emitting lasers; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788414

Filename

788414