Title :
Design of low-loss single-mode vertical-cavity surface-emitting lasers
Author :
Bond, Aaron E. ; Dapkus, P.Daniel ; O´Brien, John D.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
An in depth study of aperture placement relative to the electric field standing wave of oxide aperture vertical-cavity surface-emitting lasers (VCSELs) is presented. VCSELs with oxide apertures placed at a node and at an antinode are studied for their dependence of internal loss, far field, threshold current, and efficiency on the position of a thin AlOx current aperture relative to the longitudinal standing wave in the cavity
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical design techniques; optical losses; surface emitting lasers; AlO; InGaAs; InGaAs low loss single mode SQW DBR VCSEL laser design; VCSEL; antinode; aperture placement; electric field standing wave; far field; internal loss; laser cavity resonators; longitudinal standing wave; low-loss single-mode vertical-cavity surface-emitting laser design; node; oxide aperture; oxide aperture vertical-cavity surface-emitting lasers; thin AlOx current aperture; threshold current; Apertures; Bonding; Diffraction; Distributed Bragg reflectors; Optical design; Resonance; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788420
