Title :
Transit-time limited frequency response of InGaAs MSM photodetectors
Author :
Soole, Julian B D ; Schumacher, Hermann
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
11/1/1990 12:00:00 AM
Abstract :
Calculations are reported of the transit-time limited frequency response of InGaAs interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors for 1.55-μm wavelength incident radiation. The response is examined for light which is incident from above and a two-dimensional simulation based on carrier drift is used. It is shown how the impulse response of the device changes as the interdigital spacing and the InGaAs layer thickness vary over the range typically assumed by practical detectors. The device bandwidths are also computed, and the tradeoff which occurs between high-speed performance and high quantum efficiency is studied
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; photodetectors; semiconductor device models; 1.55 micron; InGaAs layer thickness; MSM photodetectors; Schottky barrier photodetectors; carrier drift; device bandwidths; high-speed performance; impulse response; interdigital spacing; interdigitated metal-semiconductor-metal; quantum efficiency; semiconductors; tradeoff; transit-time limited frequency response; two-dimensional simulation; Bandwidth; Dark current; Detectors; Electrodes; Fingers; Frequency response; Indium gallium arsenide; Optical fiber devices; Photodetectors; Schottky barriers;
Journal_Title :
Electron Devices, IEEE Transactions on
