Transit-time limited frequency response of InGaAs MSM photodetectors

Author

Soole, Julian B D ; Schumacher, Hermann

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

37

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

2285

Lastpage

2291

Abstract

Calculations are reported of the transit-time limited frequency response of InGaAs interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors for 1.55-μm wavelength incident radiation. The response is examined for light which is incident from above and a two-dimensional simulation based on carrier drift is used. It is shown how the impulse response of the device changes as the interdigital spacing and the InGaAs layer thickness vary over the range typically assumed by practical detectors. The device bandwidths are also computed, and the tradeoff which occurs between high-speed performance and high quantum efficiency is studied

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; photodetectors; semiconductor device models; 1.55 micron; InGaAs layer thickness; MSM photodetectors; Schottky barrier photodetectors; carrier drift; device bandwidths; high-speed performance; impulse response; interdigital spacing; interdigitated metal-semiconductor-metal; quantum efficiency; semiconductors; tradeoff; transit-time limited frequency response; two-dimensional simulation; Bandwidth; Dark current; Detectors; Electrodes; Fingers; Frequency response; Indium gallium arsenide; Optical fiber devices; Photodetectors; Schottky barriers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.62290

Filename

62290