Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

Author

Imafuji, Osamu ; Fukuhisa, Toshiya ; Yuri, Masaaki ; Mannoh, Masaya ; Yoshikawa, Akio ; Itoh, Kunio

Author_Institution

Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan

Volume

5

Issue

3

fYear

1999

Firstpage

721

Lastpage

728

Abstract

Low operating current and high-temperature operation has been demonstrated in 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned (RISA) structure. The RISA structure features an Al_0.5In_0.5P current blocking layer, which leads to small internal loss in the waveguide and substantially reduced operating carrier density. The resultant operating current for 50-mW continuous-wave at 70°C is as low as 98 mA, which is almost a half of the lowest value ever reported

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; laser beams; optical losses; quantum well lasers; refractive index; waveguide lasers; 650 nm; 70 C; 98 mA; Al_0.5In_0.5P; Al_0.5In_0.5P current blocking layer; AlGaInP; current blocking layer; high-power laser diodes; high-temperature operation; internal loss; low operating current operation; operating carrier density; operating current; real refractive index guided self-aligned structure; self-aligned structure; waveguide; Charge carrier density; DVD; Diode lasers; Memory; Optical materials; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Temperature;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.788442

Filename

788442