Title :
40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes
Author :
Shimada, Naohiro ; Horiuchi, Osamu ; Gen-Ei, Koichi ; Tanaka, Akira ; Okada, Makoto ; Watanabe, Minoru ; Itoh, Yoshiyuki ; Okuda, Hajime ; Fukuoka, Kazuo
Author_Institution :
Semicond. Group, Toshiba Corp., Kawasaki, Japan
Abstract :
High-power and high-temperature operation of 40 mW at 100°C has been realized in 655-nm band multiple-quantum-well (MQW) laser diodes. Both low threshold current density and low optical power density have been achieved by optimizing InGaP-InGaAlP strained MQW separate-confinement heterostructure, high doping for acceptors in p-cladding layer and adopting low-optical-loss high-reflectivity-coating at the rear facet. Fundamental-transverse-mode operation, up to 70 mW, was obtained. High-frequency and large-intensity modulation characteristics above 1 GHz were demonstrated. The relative intensity noise values were as low as -135 dB/Hz under an optical feedback with high-frequency modulation. Stable operation of 30 mW at 70°C over 1000 h was accomplished
Keywords :
III-V semiconductors; aluminium compounds; claddings; frequency modulation; gallium compounds; indium compounds; laser beams; laser feedback; laser modes; laser noise; optical modulation; quantum well lasers; 1 GHz; 100 C; 1000 h; 30 mW; 40 mW; 655 nm; 70 C; InGaP-InGaAlP; InGaP-InGaAlP laser; acceptors; doping; fundamental-transverse-mode operation; high-frequency modulation; high-frequency modulation characteristics; high-power operation; high-temperature operation; large-intensity modulation characteristics; low optical power density; low threshold current density; low-optical-loss high-reflectivity-coating; maximum temperature operation; multiple-quantum-well laser diodes; optical feedback; p-cladding layer; rear facet; relative intensity noise values; stable operation; strained MQW separate-confinement heterostructure; strained multiple-quantum-well laser diodes; Diode lasers; Laser feedback; Laser noise; Optical feedback; Optical modulation; Optical noise; Quantum well devices; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788443
