Title :
Narrow-gate In0.53Ga0.47As junction field-effect transistors as tunable resistors for long-wavelength integrated optical receivers
Author :
Lo, Dennis C W ; Brown, Julia J. ; Gardner, James T. ; Chung, Yun Kee ; Lee, Chia-di ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
11/1/1990 12:00:00 AM
Abstract :
The fabrication of In0.53Ga0.47As junction field-effect transistors (JFETs) for use as active feedback resistors in integrated transimpedance photoreceivers is described. Transistors using both air-bridge and non-air-bridge technologies are described. Varying the gate-to-source voltage (VGS) allows the output resistance to be tuned continuously between 3 and 40 kΩ with a drain-to-source shunt capacitance of less than 10 fF. The temperature coefficient of the output resistance is between -5 and -20 Ω/°C (for VGS less than the pinch-off voltage). The combination of large resistance and low shunt capacitance can result in high receiver sensitivity without sacrificing amplifier dynamic range. The feedback FETs are fabricated adjacent to 1.8-μm gate JFETs with transconductances of 110 mS/mm and gate-to-source capacitances of 1.3 pF/mm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; resistors; 1.8 micron; 10 fF; 3 to 40 kohm; In0.53Ga0.47As; OEIC; active feedback resistors; air bridge technology; drain-to-source shunt capacitance; fabrication; feedback FETs; gate-to-source capacitances; gate-to-source voltage; high receiver sensitivity; integrated transimpedance photoreceivers; junction field-effect transistors; long-wavelength integrated optical receivers; narrow-gate JFETs; semiconductors; temperature coefficient; tunable resistors; Bandwidth; Dynamic range; FETs; Integrated optics; Optical feedback; Optical receivers; Parasitic capacitance; Preamplifiers; Resistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
