Title :
High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Author :
Erbert, Götz ; Bugge, F. ; Knauer, A. ; Sebastian, J. ; Thies, A. ; Wenzel, Hans ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structures were studied. In the wavelength range between 715 and 790 nm, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; quantum well lasers; 715 to 790 nm; AlGaAs; GaAsP; GaAsP-AlGaAs; broad-area lasers; conversion efficiencies; high-power lasers; optical cavity structures; output power; quantum-well lasers; tensile-strained lasers; tensile-strained quantum well lasers; wavelength range; Biomedical optical imaging; Epitaxial growth; Optical pumping; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Stability; Temperature; Tensile strain;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.788451
