DocumentCode
1550716
Title
High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
Author
Erbert, Götz ; Bugge, F. ; Knauer, A. ; Sebastian, J. ; Thies, A. ; Wenzel, Hans ; Weyers, M. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Volume
5
Issue
3
fYear
1999
Firstpage
780
Lastpage
784
Abstract
Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structures were studied. In the wavelength range between 715 and 790 nm, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; quantum well lasers; 715 to 790 nm; AlGaAs; GaAsP; GaAsP-AlGaAs; broad-area lasers; conversion efficiencies; high-power lasers; optical cavity structures; output power; quantum-well lasers; tensile-strained lasers; tensile-strained quantum well lasers; wavelength range; Biomedical optical imaging; Epitaxial growth; Optical pumping; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Stability; Temperature; Tensile strain;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.788451
Filename
788451
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