DocumentCode
1550719
Title
Short-wavelength (0.7 μm<λ<0.78 μm) high-power InGaAsP-active diode lasers
Author
Mawsi, L.J. ; Rusli, S. ; Al-Muhanna, A. ; Wade, J.K.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
5
Issue
3
fYear
1999
Firstpage
785
Lastpage
791
Abstract
Short-wavelength Al-free active-region compressively strained (Δa/a=1.6%) InGaAsP single-quantum-well diode lasers have been optimized for high continuous-wave (CW) output powers. The use of a highly misoriented substrate is shown to improve the low-temperature spectral characteristics of the active quantum well and result in higher laser performance. By employing strain compensated active regions and growth on highly misoriented substrates, record-high characteristic temperature coefficients T0 (115-125 K) and T1 (400-500 K) are achieved for this wavelength region (λ=0.73 μm). A broad waveguide laser design with In0.5(Ga0.5 Al0.5)0.5P cladding layers is utilized to achieve CW output powers of 3.2 W (100-μm wide, L=1 mm), with stable operation demonstrated at 0.5-W CW
Keywords
Debye temperature; III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; waveguide lasers; 0.5 W; 0.7 to 0.78 mum; 0.73 mum; 100 mum; 115 to 125 K; 3.2 W; 400 to 500 K; Al-free active-region compressively strained; CW output powers; In0.5(Ga0.5Al0.5)0.5P cladding layers; InGaAsP; active quantum well; broad waveguide laser design; characteristic temperature coefficients; continuous-wave output powers; high-power diode lasers; highly misoriented substrates; laser performance; low-temperature spectral characteristics; misoriented substrate; short-wavelength laser; single-quantum-well diode lasers; stable operation; strain compensated active regions; wavelength region; Aluminum; Degradation; Diode lasers; Gas lasers; Laser stability; Power lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.788452
Filename
788452
Link To Document