DocumentCode
155073
Title
Porous silicon dioxide films synthesis and their electrical properties
Author
Sakharov, Yu.V. ; Troyan, P.E.
Author_Institution
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Volume
2
fYear
2014
fDate
25-26 Sept. 2014
Firstpage
378
Lastpage
381
Abstract
This paper presents the synthesis technology and electrical properties of porous silicon dioxide films made by magnetron sputtering of the composite target (Si:C) in an oxygen atmosphere. Such method is fully compatible with the existing stages of integrated circuits production implemented in the majority of cases in vacuum conditions.
Keywords
porous materials; silicon compounds; sputter deposition; thin films; SiC; composite target; electrical properties; integrated circuits; magnetron sputtering; oxygen atmosphere; porous silicon dioxide films; vacuum conditions; Educational institutions; Electronic mail; Etching; Films; Magnetic properties; Silicon; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering (APEDE), 2014 International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4799-3437-9
Type
conf
DOI
10.1109/APEDE.2014.6958281
Filename
6958281
Link To Document