A realistic large-signal MESFET model for SPICE

Author

Parker, Anthony Edward ; Skellern, David James

Author_Institution

Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia

Volume

45

Issue

9

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

1563

Lastpage

1571

Abstract

A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented, It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and intermodulation. The model has improved descriptions of capacitance and bias dependence. It has small-signal S-parameter accuracy extended to a wide range of operating conditions. The model is implemented with new techniques for continuity and dispersion. These provide accurate prediction of circuit performance and also improve simulation speed

Keywords

S-parameters; SPICE; Schottky gate field effect transistors; capacitance; electric breakdown; electric distortion; equivalent circuits; intermodulation; microwave field effect transistors; semiconductor device models; SPICE; bias dependence; breakdown; capacitance; circuit distortion; circuit performance prediction; drain conductance; frequency dispersion; intermodulation; large-signal MESFET model; power dissipation; simulation speed improvement; small-signal S-parameter accuracy; subthreshold conduction; transconductance; Circuits; Distortion measurement; Electric breakdown; Frequency; Intermodulation distortion; MESFETs; Power dissipation; SPICE; Subthreshold current; Transconductance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.622923

Filename

622923