Title :
A new simultaneous noise and input power matching technique for monolithic LNA´s using cascode feedback
Author :
Beom Kyu Ko ; Lee, Kwyro
Author_Institution :
Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fDate :
9/1/1997 12:00:00 AM
Abstract :
In this paper, a new simultaneous impedance-matching technique of Γopt (optimum noise-match source reflection coefficient) and Gmax (maximum available power gain-match (MAPG) source reflection coefficient) using cascode feedback (CF) is proposed. A 1.57-GHz single-stage monolithic-microwave Integrated-circuit (MMIC) low-noise amplifier (LNA) designed with this technique has been fabricated using GaAs MESFET technology in order to verify the feasibility of this scheme. The measured response agrees well with the simulated performance. Extensive computer simulation shows that when silicon npn bipolar junction transistor (BJT) is used, this scheme enables us to make both Γopt and Gmax points near to 50 Ω, in addition to the simultaneous noise and input power matching. In addition, it has all the advantages of negative feedback such as stability, wider bandwidth, and insensitivity against parameter variation
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; circuit stability; feedback amplifiers; gallium arsenide; integrated circuit design; integrated circuit noise; 1.57 GHz; GaAs; MESFET technology; MMIC low-noise amplifier; available power gain-match; bandwidth; cascode feedback; input power matching technique; negative feedback; optimum noise-match source reflection coefficient; parameter variation insensitivity; source reflection coefficient; stability; Acoustic reflection; Computational modeling; Computer simulation; Feedback; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFETs; MMICs; Optimized production technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
