DocumentCode :
1550868
Title :
High-cycle fatigue of single-crystal silicon thin films
Author :
Muhlstein, Christopher L. ; Brown, Stuart B. ; Ritchie, Robert O.
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA
Volume :
10
Issue :
4
fYear :
2001
fDate :
12/1/2001 12:00:00 AM
Firstpage :
593
Lastpage :
600
Abstract :
When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (~20 μm thick) single crystal silicon specimens were tested to failure in a controlled air environment (30±0.1°C, 50±2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1×106 to 1×1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation
Keywords :
elemental semiconductors; fatigue; fracture mechanics; micromechanical devices; semiconductor thin films; silicon; 10 s to 48 day; 20 micron; 30 C; Si; alternating stresses; brittle materials; damage accumulation; fracture surface evaluation; high cycle fatigue; notched cantilever beams; premature failure; single-crystal Si films; Ceramics; Crystalline materials; Degradation; Fatigue; Humidity control; Semiconductor thin films; Silicon; Solids; Stress; Testing;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.967383
Filename :
967383
Link To Document :
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