DocumentCode :
1551051
Title :
A 70- 
m Pitch 8- W Self-Biased Charge-Integration Active Pixel for Digital Mammography
Author :
Figueras, R. ; Sabadell, J. ; Teres, L. ; Serra-Graells, F.
Author_Institution :
Inst. de Micro Electronicade Barcelona IMB, CSIC, Barcelona, Spain
Volume :
5
Issue :
5
fYear :
2011
Firstpage :
481
Lastpage :
489
Abstract :
This paper presents a new low-power compact CMOS active pixel circuit specifically optimized for full-field digital mammography. The proposed digital pixel sensor (DPS) architecture includes self-bias capability at ±10% accuracy, up to 15 nA of dark-current autocalibration, built-in test mechanisms, selectable e-/h+ collection, 10-b lossless charge-integration analog-to-digital conversion, more than 1 decade of individual gain tuning for fixed pattern noise cancellation, and a 50-Mb/s digital-only input/output interface. Experimental results for a 70-μm pitch 8-μW DPS cell example are reported in 0.18-μm CMOS 1-polySi 6-metal technology.
Keywords :
CMOS digital integrated circuits; mammography; 0.18-μm CMOS 1-polySi 6-metal technology; DPS architecture; built-in test mechanisms; dark-current autocalibration; digital pixel sensor; fixed pattern noise cancellation; full-field digital mammography; gain tuning; input/output interface; lossless charge-integration analog-to-digital conversion; low-power compact CMOS active pixel circuit; power 8 muW; self-bias capability; self-biased charge-integration active pixel; size 70 mum; Analog-digital conversion; CMOS integrated circuits; Computer architecture; Dark current; Microprocessors; Pixel; Sensors; Complementary metal–oxide semiconductor (CMOS); X-ray; digital pixel sensor (DPS); imaging; low power; mammography;
fLanguage :
English
Journal_Title :
Biomedical Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1932-4545
Type :
jour
DOI :
10.1109/TBCAS.2011.2151192
Filename :
5871702
Link To Document :
