DocumentCode
1551104
Title
A positive photoresist adhesion promoter for PMMA on GaAs MESFETs
Author
Lamarre, P. ; McTaggart, R.
Author_Institution
Raytheon Res. Div., Lexington, MA, USA
Volume
37
Issue
11
fYear
1990
fDate
11/1/1990 12:00:00 AM
Firstpage
2406
Lastpage
2408
Abstract
The positive photoresist as an adhesion promoter for polymethylmethacrylate (PMMA) resist on GaAs is presented. It can be used with PMMA for both e -beam direct write patterning and deep-UV patterning levels. Using only 60 Å of positive photoresist as the interfacial adhesion promoter, the integrity of the PMMA is maintained during either wet chemical etching or plasma etching. The photoresist will clean up with standard metallization liftoff techniques. While only the results of adhesion with PMMA are reported, this technique can be applied to other resist systems as well
Keywords
III-V semiconductors; Schottky gate field effect transistors; electron resists; gallium arsenide; photoresists; polymer films; semiconductors; Adhesives; Chemicals; Gallium arsenide; MESFETs; Resists; Silicon; Substrates; Surface cleaning; Thermal resistance; Wet etching;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.62300
Filename
62300
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