Relationship between measured and intrinsic conductances of MOSFETs

Author

Cserveny, Stefan

Author_Institution

Swiss Center for Electron. & Microtech., Neuchatel, Switzerland

Volume

37

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

2413

Lastpage

2414

Abstract

The relationship between measured and intrinsic MOSFET small-signal conductances in the presence of source and drain series resistances given by S.Y. Chou et al. (1987) is modified to include the effect of the source resistance on the substrate bias. The equation relating the measured to the intrinsic conductances of MOSFETs with constant resistances in series with the source and the drain is derived considering the effect of the voltage drops in these resistors on gate-source, drain-source, and substrate-source voltages. The resulting degradation is the same for all small-signal conductances. The general equations make it possible to determine the conditions where the simpler previous equations can be used

Keywords

insulated gate field effect transistors; semiconductor device models; MOSFETs; degradation; drain resistance; drain-source voltages; gate-source voltages; intrinsic conductances; models; small-signal conductances; source resistance; substrate bias; substrate-source voltages; voltage drops; Books; Differential equations; Electrical resistance measurement; FETs; Joining processes; MOSFETs; Transconductance; Variable structure systems; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.62303

Filename

62303