Title :
1/f noise in bismuth ruthenate based thick-film resistors
Author :
Peled, Aaron ; Johanson, Robert E. ; Zloof, Y. ; Kasap, Safa O.
Author_Institution :
Electr. & Electron. Dept., Center for Technol. Educ., Holon, Israel
fDate :
9/1/1997 12:00:00 AM
Abstract :
We report measurements of 1/f noise in bismuth ruthenate (Bi2 Ru2O7) thick-film resistors in the frequency range of 1 Hz to 40 kHz including the dependence of the noise on the bias current, resistance in the range 1 kΩ to 400 kΩ and laser trimming effects. The noise spectra show that the magnitude of the noise parameterized by the relative noise index parameter C has the approximate dependence given by C=3×10-15 (Rsns)0.6, where ns is the aspect ratio and Rs is the sheet resistance. Technologically this is an important result since it allows the prediction of the approximate level of noise for any resistor made from the BIROX series compounds from the ink resistivity and the dimensions of the resistor. The link between the noise magnitude and noise models is examined
Keywords :
1/f noise; bismuth compounds; electron device noise; thick film resistors; 1 to 40 Hz; 1 to 400 kohm; 1/f noise; BIROX series compounds; Bi2Ru2O7; bias current; ink resistivity; laser trimming effects; noise magnitude; noise models; noise spectra; resistor dimensions; thick-film resistors; Bismuth; Current measurement; Electrical resistance measurement; Frequency measurement; Laser noise; Noise level; Noise measurement; Resistors; Signal to noise ratio; Thickness measurement;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
