DocumentCode :
1551358
Title :
Lateral MEMS microcontact considerations
Author :
Kruglick, Ezekiel J J ; Pister, Kristofer S J
Author_Institution :
Sensors & Actuators Center, California Univ., Berkeley, CA, USA
Volume :
8
Issue :
3
fYear :
1999
fDate :
9/1/1999 12:00:00 AM
Firstpage :
264
Lastpage :
271
Abstract :
A lateral switching relay structure has been developed which provides a double gold contact with as low as 70-mΩ measured contact resistance, 0.45-A current-carrying ability at MEMS compatible force levels, TTL compatible actuation, and air gap isolation when open. The die area used for the relay mechanism itself (distinct from the actuation) is approximately 75 μm by 100 μm and was designed to allow fabrication of the relays in the MCNC MUMP´s dual polysilicon foundry process with no assembly. Design analysis shows that substantial characterization is needed to design optimal microrelays. Temperature softening and failure modes have been characterized by current voltage techniques. Polysilicon vernier structures were used to develop force/current/conductance curves. Relays using thermal actuators have been built
Keywords :
contact resistance; elemental semiconductors; failure analysis; microactuators; micromechanical devices; semiconductor relays; silicon; 0.45 A; 100 micron; 70 mohm; 75 micron; MCNC MUMP´s dual polysilicon foundry process; MEMS compatible force levels; MEMS microcontact; TTL compatible actuation; air gap isolation; contact resistance; current voltage techniques; current-carrying ability; failure modes; force/current/conductance curves; lateral switching relay structure; polysilicon vernier structures; temperature softening; thermal actuators; Assembly; Contact resistance; Current measurement; Electrical resistance measurement; Fabrication; Force measurement; Foundries; Gold; Micromechanical devices; Relays;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.788630
Filename :
788630
Link To Document :
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