• DocumentCode
    1551367
  • Title

    Floating-gate enhanced current-amplification in bipolar action of SOI-MOSFET

  • Author

    Uryu, Y. ; Asano, T.

  • Author_Institution
    Center for Microelectron. Syst., Kyushu Inst. of Technol., Iizuka, Japan
  • Volume
    37
  • Issue
    21
  • fYear
    2001
  • fDate
    10/11/2001 12:00:00 AM
  • Firstpage
    1313
  • Lastpage
    1314
  • Abstract
    The effect of the presence of the electrically floating gate on the bipolar operation of a silicon on insulator metal-oxide-semiconductor field effect transistor (MOSFET) is experimentally investigated. The emitter injection efficiency is shown to be enhanced by the floating gate, the work function of which depletes the base (body) majority carrier from the channel region
  • Keywords
    MOSFET; silicon-on-insulator; work function; SOI-MOSFET; bipolar action; current amplification; emitter injection efficiency; floating gate; majority carrier depletion; work function;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010881
  • Filename
    968454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1551367