Charge to breakdown mechanism of thin ONO films

Author

Park, Min Wha ; Khang, Dae-gwan ; Goo, Jung Suk ; Park, Young-June

Author_Institution

Goldstar Electron Corp., Seoul, South Korea

Volume

37

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

2419

Lastpage

2422

Abstract

Effects of charge trapping in the thin ONO (oxide silicon nitride oxide) film caused by the voltage stress on the time-dependent dielectric breakdown (TDDB) mechanism are studied. The purpose is to report the TDDB data of the films after various treatments of charge injection and thermal annealing together with analysis of the experimental data to enhance the understanding of the dielectric breakdown mechanisms of the ONO film. It is observed that the trapped charges injected from one electrode have very little effect on the TDDB mechanism during stress to the other electrode. This suggests that the position of trapped charges may be quite different for the two injecting electrodes and that breakdown mechanisms may be initiated from the different charge positions and sources

Keywords

dielectric thin films; electric breakdown of solids; failure analysis; metal-insulator-semiconductor devices; reliability; silicon compounds; SiO₂-Si₃N₄-SiO₂; TDDB mechanism; breakdown mechanisms; charge injection; charge positions; charge to breakdown mechanism; charge trapping effects; dielectric breakdown mechanisms; experimental data; oxide nitride oxide films; thermal annealing; thin ONO films; time-dependent dielectric breakdown; voltage stress; Annealing; Capacitors; Dielectric breakdown; Dielectric thin films; Electric breakdown; Electrodes; Rapid thermal processing; Semiconductor films; Silicon; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.62306

Filename

62306