• DocumentCode
    1551402
  • Title

    Polarization Effect on the Photovoltaic Characteristics of \\hbox {Al}_{0.14}\\hbox {Ga}_{0.86}\\hbox {N}/\\hbox {In}_{0.21}\\hbox {Ga}_{0.79}\\hbox {N} Superlattice Solar C

  • Author

    Kuo, Yen-Kuang ; Lin, Han-Wei ; Chang, Jih-Yuan ; Chen, Yu-Han ; Chang, Yi-An

  • Author_Institution
    Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
  • Volume
    33
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1159
  • Lastpage
    1161
  • Abstract
    The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al0.14Ga0.86N/In0.21Ga0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al0.14Ga0.86N/In0.21Ga0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor superlattices; solar cells; wide band gap semiconductors; Al0.14Ga0.86N-In0.21Ga0.79N; crystal quality; internal polarization; p-i-n structure; photovoltaic characteristics; polarization effect; spontaneous piezoelectric polarizations; strain-induced piezoelectric polarizations; superlattice solar cells; Absorption; Gallium nitride; PIN photodiodes; Photovoltaic cells; Photovoltaic systems; Piezoelectric polarization; InGaN; polarization; solar cell; superlattice (SL);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2200229
  • Filename
    6230603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1551402