840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

Author

Lee, Jae-Hoon ; Yoo, Jong-Kyu ; Kang, Hee-Sung ; Lee, Jung-Hee

Author_Institution

R&D Inst., Samsung LED Co., Ltd., Suwon, South Korea

Volume

33

Issue

8

fYear

2012

Firstpage

1171

Lastpage

1173

Abstract

Multifinger lateral-type AlGaN/GaN Schottky barrier diode (SBD) with bonding pad over active (BPOA) structure was fabricated and exhibited excellent device performances, such as forward current of 6 A at 1.5 V, leakage current of 16 A at -600 V, reverse-recovery time (T_rr) of 18 ns, breakdown voltage of 840 V, and low specific on-resistance (R_on) of 9 m cm², resulting in the figure-of-merit (V_BR²/R_on) as high as 78 MW/cm², which demonstrates that the AlGaN/GaN SBD with BPOA structure has a great potential application to the high-power electronics.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; gallium compounds; sapphire; wide band gap semiconductors; Al₂O₃; AlGaN-GaN; BPOA structure; bonding pad over active structure; current 16 A; current 6 A; figure-of-merit; high-power electronics; low specific on-resistance; multifinger lateral-type Schottky barrier diode; reverse-recovery time; sapphire substrate; time 18 ns; voltage 1.5 V; voltage 600 V; voltage 840 V; Aluminum gallium nitride; Gallium nitride; Leakage current; Resistance; Schottky barriers; Schottky diodes; Substrates; AlGaN/GaN; Schottky barrier diode (SBD); high-power electronics; multifinger pattern; sapphire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2200450

Filename

6230607