مرکز منطقه ای اطلاع رساني علوم و فناوري - Hole Transport in Strained <formula formulatype="inline"> <img src="/images/tex/20426.gif" alt="\\hbox {Si}_{0.5} \\hbox {Ge}_{0.5}"> </formula> QW-MOSFETs With <formula formulatype="inline"> <img src="/images/tex/20403.gif" alt="\\langle \\hbox {110}\\ra

Title :

Hole Transport in Strained $\\hbox {Si}_{0.5} \\hbox {Ge}_{0.5}$ QW-MOSFETs With $\\langle \\hbox {110}\\ra</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Minamisawa, R.A. ; Schmidt, M. ; Knoll, L. ; Buca, D. ; Zhao, Q.T. ; Hartmann, J.-M. ; Bourdelle, K.K. ; Mantl, S.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Paul Scherrer Inst., Villigen, Switzerland</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1105</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1107</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Hole velocity and mobility are extracted from quantum-well (QW) biaxially strained Si<sub>0.5</sub>Ge<sub>0.5</sub> channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on silicon-on-insulator wafers. Devices have been fabricated at sub-100-nm gate length with HfO<sub>2</sub>/TiN gate stacks. A significant hole mobility enhancement over the strained Si mobility curve is observed for QW MOSFETs. We also discuss the relationship between velocity and mobility of the strained SiGe channels with high Ge content for 〈100〉 and 〈110〉 crystal directions. Whereas the mobility increases by 18% for 〈100〉 with respect to 〈110〉, it translates into a modest 8% velocity increase.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Ge-Si alloys; MOSFET; hole mobility; semiconductor quantum wells; silicon-on-insulator; QW biaxially strained channel MOSFET; Si<sub>0.5</sub>Ge<sub>0.5</sub>; channel orientations; hole mobility enhancement; hole transport; hole velocity; metal-oxide-semiconductor field-effect transistors; quantum-well; silicon-on-insulator wafers; size 100 nm; Logic gates; MOSFET circuits; MOSFETs; Silicon; Silicon germanium; Strain; High-<formula formulatype=$ $kappa$; metal–oxide–semiconductor field-effect transistor (MOSFET); mobility; silicon-on-insulator (SOI); strained SiGe; velocity;