DocumentCode
1551472
Title
The Future of Silicon Photonics: Not So Fast? Insights From 100G Ethernet LAN Transceivers
Author
Fuchs, Erica R H ; Kirchain, Randolph E. ; Liu, Shan
Author_Institution
Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
29
Issue
15
fYear
2011
Firstpage
2319
Lastpage
2326
Abstract
While many articles have touted Si photonics´ potential to bring the bandwidth and power-efficiency benefits of photonics to mainstream semiconductor applications, rigorous economic analysis has been lacking. This paper leverages extensive data from the major electronic and photonic semiconductor manufacturers to model the competitiveness of two Si photonic designs against InP-based alternatives for a 1310 nm, 100 gigabit ethernet LAN transceiver. Our results suggest that silicon photonics may struggle finding low-volume opportunities for early-stage market adoption for the very reasons that silicon photonics is attractive-the existing capital-intensive infrastructure in Si-CMOS. Contrary to popular belief, we demonstrate that InP platforms can, depending on the yields achieved in each technology, have equal to or lower production costs than silicon for all expected production volumes. Silicon photonics does hold great potential to be cost competitive in markets with annual sales volumes above 900 000, including servers, computing, and mobile devices.
Keywords
CMOS integrated circuits; III-V semiconductors; indium compounds; integrated optics; optical fibre LAN; optical transceivers; silicon; 100G ethernet LAN transceivers; InP; Si; Si-CMOS; early-stage market adoption; economic analysis; production costs; production volumes; silicon photonics; wavelength 1310 nm; Indium phosphide; Laser modes; Manufacturing; Photonics; Production; Silicon; 100 gigabit ethernet; III–V photonics; Manufacturing cost; silicon photonics;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2011.2159260
Filename
5871992
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